IPD122N10N3 G MOSFET N-CH 100V 59A TO252-3
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Datasheets | IPD122N10N3 G |
| Drain to Source Voltage (Vdss) | 100V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2500pF @ 50V |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Standard FETs |
| Other Names | IPD122N10N3 GDKR |
| PCN Packaging | Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/2015 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packaging | Digi-Reel® |
| Power - Max | 94W |
| Product Photos | TO252-3 |
| Rds On (Max) @ Id, Vgs | 12.2 mOhm @ 46A, 10V |
| Series | OptiMOS™ |
| Standard Package | 1 |
| Supplier Device Package | PG-TO252-3 |
| Vgs(th) (Max) @ Id | 3.5V @ 46µA |
