FS50R12W2T4_B11 83 A, 1200 V, N-CHANNEL IGBT
From Infineon Technologies AG
Status | ACTIVE |
Channel Type | N-CHANNEL |
Collector Current-Max (IC) | 83 A |
Collector-emitter Voltage-Max | 1200 V |
Configuration | COMPLEX |
Mfr Package Description | MODULE-33 |
Number of Elements | 6 |
Number of Terminals | 18 |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Terminal Form | UNSPECIFIED |
Terminal Position | UPPER |
Transistor Application | POWER CONTROL |
Transistor Element Material | SILICON |
Transistor Type | INSULATED GATE BIPOLAR |
Turn-off Time-Nom (toff) | 490 ns |
Turn-on Time-Nom (ton) | 185 ns |