BSS670S2LH6327 540 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From Infineon Technologies AG
| Status | ACTIVE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 55 V |
| Drain Current-Max (ID) | 0.5400 A |
| Drain-source On Resistance-Max | 0.8250 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 10 pF |
| Mfr Package Description | GREEN, PLASTIC PACKAGE-3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Power Dissipation Ambient-Max | 0.3600 W |
| Surface Mount | Yes |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE SMALL SIGNAL |
