BSP318SH6327XTSA1
MOSFET N-CH 60V 2.6A

From Infineon Technologies

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C2.6A (Tj)
DatasheetsBSP318S
Drain to Source Voltage (Vdss)60V
FET FeatureLogic Level Gate
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs20nC @ 10V
Input Capacitance (Ciss) @ Vds380pF @ 25V
Mounting TypeSurface Mount
Other NamesQ8241403
Package / CaseTO-261-4, TO-261AA
PackagingTape & Reel (TR)
Power - Max1.8W
Rds On (Max) @ Id, Vgs90 mOhm @ 2.6A, 10V
SeriesSIPMOS®
Standard Package1,000
Supplier Device PackagePG-SOT223-4
Vgs(th) (Max) @ Id2V @ 20µA

External links