BSM100GB170DN2 IGBT Modules 1700V 100A DUAL
From Infineon Technologies
Brand | Infineon Technologies |
Collector- Emitter Voltage VCEO Max | 1700 V |
Collector-Emitter Saturation Voltage | 3.4 V |
Configuration | Half Bridge |
Continuous Collector Current at 25 C | 145 A |
Factory Pack Quantity | 500 |
Gate-Emitter Leakage Current | 320 nA |
Manufacturer | Infineon |
Maximum Gate Emitter Voltage | 20 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 40 C |
Mounting Style | Screw |
Package / Case | Half Bridge2 |
Packaging | Bulk |
Pd - Power Dissipation | 1 kW |
Product | IGBT Silicon Modules |
Product Category | IGBT Modules |
RoHS | No |