BSM100GB160D Half Bridge IGBT Power Module
From Infineon Technologies
@I(C) (A) (Test Condition) | 100 |
@V(CE) (V) (Test Condition) | 20 |
Absolute Max. Power Diss. (W) | 1.0k |
Circuits Per Package | 1 |
I(C) Abs.(A) Collector Current | 135 |
Package | MODULE-var |
V(BR)CES (V) | 1.6k |
V(BR)GES (V) | 20 |
V(GE)th Max. (V) | 6.2 |
g(fe) Min. (S) Trans. admitt. | 36 |
t(d)off Max. (s) Off time | 2.5u |
t(f) Max. (s) Fall time. | 150u |
t(r) Max. (s) Rise time | 300n |
td(on) Max (s) On time delay | 850n |