BSM100GB160D
Half Bridge IGBT Power Module

From Infineon Technologies

@I(C) (A) (Test Condition)100
@V(CE) (V) (Test Condition)20
Absolute Max. Power Diss. (W)1.0k
Circuits Per Package1
I(C) Abs.(A) Collector Current135
PackageMODULE-var
V(BR)CES (V)1.6k
V(BR)GES (V)20
V(GE)th Max. (V)6.2
g(fe) Min. (S) Trans. admitt.36
t(d)off Max. (s) Off time2.5u
t(f) Max. (s) Fall time.150u
t(r) Max. (s) Rise time300n
td(on) Max (s) On time delay850n

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