BFY450 (P) RF Bipolar Transistors HiRel NPN Silicon RF Transistor
From Infineon Technologies
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 4.5 V |
| Configuration | Single Dual Emitter |
| Continuous Collector Current | 100 mA |
| DC Collector/Base Gain hfe Min | 50 at 20 mA at 1 V |
| Emitter- Base Voltage VEBO | 1.5 V |
| Factory Pack Quantity | 1 |
| Frequency | 22000 MHz |
| Manufacturer | Infineon |
| Maximum DC Collector Current | 0.1 A |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 65 C |
| Mounting Style | SMD/SMT |
| Package / Case | Micro-X |
| Packaging | Bulk |
| Part # Aliases | BFY450PZZZA1 |
| Pd - Power Dissipation | 450 mW |
| Product Category | RF Bipolar Transistors |
| RoHS | No |
| Technology | Si |
| Transistor Polarity | NPN |
| Transistor Type | Bipolar |
