Datasheet.Directory

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"125A","Switching Energy":"5.1mJ (on), 13.3mJ (off)","Vce(on) (Max) @ Vge, Ic":"2.3V @ 15V, 55A","Td (on/off) @ 25\u00b0C":"23ns/365ns","Input Type":"Standard","Package / Case":"TO-264-3, TO-264AA","Gate Charge":"185nC","Product Photos":"TO-264","Voltage - Collector Emitter Breakdown (Max)":"1200V","Reverse Recovery Time (trr)":"200ns","Datasheets":"IXGx55N120A3H1","Standard Package":"25","Test Condition":"960V, 55A, 3 Ohm, 15V",...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Turn-off Time-Nom (toff)":"1253 ns","Collector Current-Max (IC)":"125 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"70 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1200 V","Channel Type":"N-CHANNEL","Transi...