Product Datasheet Search Results:
7 Pages, 269 KB, Original- IRFG110
- Infineon Technologies Ag
- Trans MOSFET N-CH 100V 1A 14-Pin MO-036AB
7 Pages, 269 KB, Original- IRFG110
- International Rectifier
- 1 A, 100 V, 0.8 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-036AB
7 Pages, 221 KB, Original- IRFG110(N)
- International Rectifier
- 100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
7 Pages, 269 KB, Original- IRFG110PBF
- International Rectifier
- 1 A, 100 V, 0.8 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-036AB
2 Pages, 22 KB, Original- IRFG110
- Semelab Plc.
- 1000 mA, 100 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2 Pages, 22 KB, Original- IRFG110-JQR-B
- Semelab Plc.
- 1000 mA, 100 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2 Pages, 22 KB, Original- IRFG110-JQR-BR1
- Semelab Plc.
- 1000 mA, 100 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2 Pages, 22 KB, Original- IRFG110R1
- Semelab Plc.
- 1000 mA, 100 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Product Details Search Results:
Infineon.com/IRFG110
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"1(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Power Dissipation":"1.4(W)","Operating Temp Range":"-55C to 150C","Package Type":"MO-036AB","Type":"Power MOSFET","Pin Count":"14","Number of Elements":"4"}...
1447 Bytes - 16:10:19, 29 November 2024
Irf.com/IRFG110
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"4 A","Channel T...
1543 Bytes - 16:10:19, 29 November 2024
Irf.com/IRFG110PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER",...
1608 Bytes - 16:10:19, 29 November 2024
Semelab.co.uk/IRFG110
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"HERMETIC SEALED PACKAGE-14","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SEPARATE, ...
1360 Bytes - 16:10:19, 29 November 2024
Semelab.co.uk/IRFG110-JQR-B
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"HERMETIC SEALED PACKAGE-14","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SEPARATE, ...
1396 Bytes - 16:10:19, 29 November 2024
Semelab.co.uk/IRFG110-JQR-BR1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"HERMETIC SEALED PACKAGE-14","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Element Material":"SILICON","Channel Type":"N-CHANNEL","Drain Current-Max (ID)":"1 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package ...
1456 Bytes - 16:10:19, 29 November 2024
Semelab.co.uk/IRFG110R1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"HERMETIC SEALED PACKAGE-14","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Element Material":"SILICON","Channel Type":"N-CHANNEL","Drain Current-Max (ID)":"1 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package ...
1418 Bytes - 16:10:19, 29 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 5SFG1100A07500X.pdf | 0.51 | 1 | Request | |
| ERG3FG110H.pdf | 0.92 | 1 | Request | |
| ERG5FG110H.pdf | 0.92 | 1 | Request | |
| ERG2FG110H.pdf | 0.92 | 1 | Request | |
| 1FG1101-..D06-2....pdf | 2.85 | 1 | Request | |
| 1FG1107-..G02-2....pdf | 2.85 | 1 | Request | |
| 1FG1104-..F43-2....pdf | 2.85 | 1 | Request | |
| 1FG1103-..F63-4....pdf | 2.85 | 1 | Request | |
| 1FG1106-..F34-2....pdf | 2.85 | 1 | Request | |
| 1FG1103-..F52-4....pdf | 2.85 | 1 | Request | |
| 1FG1104-..G13-2....pdf | 2.85 | 1 | Request | |
| 1FG1106-..F32-2....pdf | 2.85 | 1 | Request |
