Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"110(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"200(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"110A (Tc)","Gate Charge (Qg) @ Vgs":"146nC @ 10V","Product Photos":"TO-263","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"8 mOhm @ 62A, 10V","Datasheets":"IRF3205(S,L)PbF","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packagi...

{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Rise Time":"101 ns","Typical Turn-Off Delay Time":"50 ns","Description":"Value","Maximum Continuous Drain Current":"110 A","Package":"3D2PAK","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"14 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"8@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"65 ns"}...