Product Datasheet Search Results:
12 Pages, 218 KB, Original- IRF1302S
- International Rectifier
- MOSFET N-CH 20V 174A D2PAK - IRF1302S
12 Pages, 218 KB, Original- IRF1302SPBF
- International Rectifier
- 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF1302S with Lead Free Packaging
12 Pages, 255 KB, Original- IRF1302STRL
- International Rectifier
- 75 A, 20 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET
12 Pages, 255 KB, Original- IRF1302STRLPBF
- International Rectifier
- 75 A, 20 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET
12 Pages, 255 KB, Original- IRF1302STRR
- International Rectifier
- 75 A, 20 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET
12 Pages, 255 KB, Original- IRF1302STRRPBF
- International Rectifier
- 75 A, 20 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Irf.com/IRF1302S
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"174A (Tc)","Gate Charge (Qg) @ Vgs":"120nC @ 10V","Product Photos":"TO-263","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"4 mOhm @ 104A, 10V","Datasheets":"IRF1302S(L)","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"50","Drain ...
1772 Bytes - 17:47:05, 29 November 2024
Irf.com/IRF1302STRL
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"350 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0040 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"700 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1530 Bytes - 17:47:05, 29 November 2024
Irf.com/IRF1302STRLPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"350 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0040 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"700 A","Channel Type":"...
1616 Bytes - 17:47:05, 29 November 2024
Irf.com/IRF1302STRR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"350 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0040 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"700 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1528 Bytes - 17:47:05, 29 November 2024
Irf.com/IRF1302STRRPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"350 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0040 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"700 A","Channel Type":"...
1614 Bytes - 17:47:05, 29 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF1302S.pdf | 0.23 | 1 | Request |
