H5MS1262EFP-L3E 8M X 16 DDR DRAM, 5 ns, PBGA60
From SK Hynix
| Status | ACTIVE |
| Access Mode | FOUR BANK PAGE BURST |
| Access Time-Max (tRAC) | 5 ns |
| Memory Density | 1.34E8 deg |
| Memory IC Type | DDR DRAM |
| Memory Width | 16 |
| Mfr Package Description | 8 X 10 MM, ROHS COMPLIANT, FBGA-60 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 60 |
| Number of Words | 8.39E6 words |
| Number of Words Code | 8M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -30 Cel |
| Organization | 8M X 16 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| Supply Voltage-Max (Vsup) | 1.95 V |
| Supply Voltage-Min (Vsup) | 1.7 V |
| Supply Voltage-Nom (Vsup) | 1.8 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | OTHER |
| Terminal Form | BALL |
| Terminal Pitch | 0.8000 mm |
| Terminal Position | BOTTOM |
