HY51V4410BLT80 General Purpose Dynamic RAM - Read-Modify-Write capability.
From Hyundai Semiconductor
| Bits Per Word | 4 |
| Military | N |
| Nom. Supp (V) | 3.3 |
| Number of Words | 1M |
| Output Config | 3-State |
| P(D) Max.(W) Power Dissipation | 900m |
| Package | TSOP-20/26 |
| Pins | 26 |
| Technology | CMOS |
| t(acc) Max. (S) | 80n |
| tW Min (S) | 150n |
