S1087-01K Infrared-Optimized Photodiode
From Hamamatsu Corporation
| @V(R) (V) (Test Condition) | 1.0 |
| @Wavelength(m)(Test Condition) | 940n |
| C(T) Max. (F) Capacitance | 200p |
| I(sc)out (A)Short-circuit Cur. | 1.5u |
| Ioff Max.(A) Off-state Current | 10p |
| Package | Cell-1d |
| Photosensitive Area (mm2) | 1.69 |
| Re Min.(A/W) Responsivity | .55 |
| Semiconductor Material | Silicon |
| Spectral Response High (m) | 1.1u |
| Spectral Response Low (m) | 300n |
| V(R) Max.(V) Reverse Voltage | 10 |
| t(resp) Max.(s) Response Time | 500n |
