GS66508P-E05-TY
MOSFET 650V 30A E-Mode GaN Preproduction Units

From GaN Systems

BrandGaN Systems
Channel ModeEnhancement
Id - Continuous Drain Current30 A
ManufacturerGaN Systems
Mounting StyleSMD/SMT
PackagingTray
Product CategoryMOSFET
Qg - Gate Charge6.5 nC
Rds On - Drain-Source Resistance55 mOhms
RoHSDetails
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage650 V
Vgs - Gate-Source Breakdown Voltage+/- 10 V
Vgs th - Gate-Source Threshold Voltage1.6 V

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