2SK3589-01 6.9 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
From Fuji Electric Corp. of America
| Status | ACTIVE |
| Avalanche Energy Rating (Eas) | 319 mJ |
| Case Connection | DRAIN |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 6.9 A |
| Drain-source On Resistance-Max | 0.0250 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | TFP, 4 PIN |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | UNSPECIFIED |
| Package Shape | SQUARE |
| Package Style | CHIP CARRIER |
| Power Dissipation Ambient-Max | 2.4 W |
| Pulsed Drain Current-Max (IDM) | 292 A |
| Surface Mount | Yes |
| Terminal Form | NO LEAD |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
