2SK2894-01R 100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
From Fuji Electric Corp. of America
Status | ACTIVE |
Case Connection | ISOLATED |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 100 A |
Drain-source On Resistance-Max | 0.0070 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | TO-3PF, 3 PIN |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Pulsed Drain Current-Max (IDM) | 400 A |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |