1MBI1200UE-330
IGBT Array & Module Transistor, 1.2 kA, 3.15 V, 14.7 kW, 3.3 kV, Module

From FUJI ELECTRIC

Collector Emitter Voltage V(br)ceo:3.3 kV
Collector Emitter Voltage Vces:3.15 V
DC Collector Current:1.2 kA
No. of Pins:9
Operating Temperature Max:150 °C
Power Dissipation Pd:14.7 kW
SVHC:To Be Advised
Transistor Case Style:Module
Transistor Polarity:-

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