FMP20N50E
IC, MOSFET; N-Channel, FAP-E3 Planar; 500V; 20A; 270W; TO-220AB

From Fuji Semiconductor

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Dimensions10 x 4.5 x 15 mm
Forward Diode Voltage1.35 V
Forward Transconductance22 S
Height15 mm
Length10 mm
Maximum Continuous Drain Current±20 A
Maximum Drain Source Resistance0.31 Ω
Maximum Drain Source Voltage500 V
Maximum Gate Source Voltage±30 V
Maximum Operating Temperature+150 °C
Maximum Power Dissipation270 W
Minimum Operating Temperature-55 °C
Mounting TypeThrough Hole
Number of Elements per Chip1
Operating Temperature Range-55 to +150 °C
Package TypeTO-220AB
Pin Count3
Typical Gate Charge @ Vgs77 nC @ 10 V
Typical Input Capacitance @ Vds2650 pF @ 25 V
Typical Turn On Delay Time22 ns
Typical TurnOff Delay Time120 ns
Width4.5 mm

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