2SK3271-01 MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 5 Milliohms; ID +/-100A; TO-3P; PD 155W; VGS +/-
From Fuji Semiconductor
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Dimensions | 15.5 x 4.5 x 19.5 mm |
| Forward Diode Voltage | 1.5 V |
| Forward Transconductance | 50 sec |
| Height | 19.5 mm |
| Length | 15.5 mm |
| Maximum Continuous Drain Current | ±100 A |
| Maximum Drain Source Resistance | 6.5 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | ±30 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 155 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-220AB |
| Pin Count | 3 |
| Typical Input Capacitance @ Vds | 9000 pF @ 25 V |
| Typical Turn On Delay Time | 50 ns |
| Typical TurnOff Delay Time | 150 ns |
| Width | 4.5 mm |
