VN1710L
120 mA, 170 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

From Motorola Solutions, Inc.

StatusDiscontinued
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min170 V
Drain Current-Max (ID)0.1200 A
Drain-source On Resistance-Max10 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-92
JESD-30 CodeO-PBCY-W3
JESD-609 Codee0
Moisture Sensitivity LevelNOT SPECIFIED
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeROUND
Package StyleCYLINDRICAL
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Power Dissipation Ambient-Max0.4000 W
Qualification StatusCOMMERCIAL
Surface MountNO
Terminal FinishTIN LEAD
Terminal FormWIRE
Terminal PositionBOTTOM
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor Element MaterialSILICON

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