MTM55N08
N-Channel Enhancement MOSFET

From Motorola

@(VDS) (V) (Test Condition)20
@I(D) (A) (Test Condition)28
@V(DS) (V) (Test Condition)15
Absolute Max. Power Diss. (W)250
C(iss) Max. (F)5.0n
I(D) Abs. Drain Current (A)55
I(DSS) Min. (A)100u
I(GSS) Max. (A)100n
MilitaryN
PackageTO-204AE
V(BR)DSS (V)80
V(BR)GSS (V)20
g(fs) Min. (S) Trans. conduct.10
r(DS)on Max. (Ohms)40m
t(f) Max. (s) Fall time.400n
t(r) Max. (s) Rise time350n

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