MJ11032HXV NPN Darlington Transistor
From Motorola
| @I(B) (A) (Test Condition) | 500m |
| @I(C) (A) (Test Condition) | 50 |
| @V(CE) (V) (Test Condition) | 5.0 |
| Absolute Max. Power Diss. (W) | 300 |
| I(C) Abs.(A) Collector Current | 50 |
| I(CBO) Max. (A) | 2.0m |
| Military | N |
| Package | TO-204AE |
| Semiconductor Material | Silicon |
| V(BR)CBO (V) | 120 |
| V(BR)CEO (V) | 120 |
| V(CE)sat Max.(V) | 3.5 |
| h(FE) Max. Current gain. | 18k |
| h(FE) Min. Static Current Gain | 1.0k |
