FQP6N80C MOSFET N-CH 800V 5.5A TO-220
From Fairchild Semiconductor
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Datasheets | FQP(F)6N80C TO220B03 Pkg Drawing |
| Drain to Source Voltage (Vdss) | 800V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1310pF @ 25V |
| Mounting Type | Through Hole |
| Online Catalog | N-Channel Standard FETs |
| PCN Design/Specification | Passivation Material 26/June/2007 |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Power - Max | 158W |
| Product Photos | TO-220-3 |
| Product Training Modules | High Voltage Switches for Power Processing |
| Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 2.75A, 10V |
| Series | QFET® |
| Standard Package | 50 |
| Supplier Device Package | TO-220 |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
