FDB6021PL99Z 28 A, 20 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
From Fairchild Semiconductor Corporation
Status | ACTIVE-UNCONFIRMED |
Case Connection | DRAIN |
Channel Type | P-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 20 V |
Drain Current-Max (ID) | 28 A |
Drain-source On Resistance-Max | 0.0300 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | TO-263AB, 3 PIN |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Pulsed Drain Current-Max (IDM) | 80 A |
Surface Mount | Yes |
Terminal Form | GULL WING |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |