Product Datasheet Search Results:
10 Pages, 349 KB, Original- FDB8030LL86Z
- Fairchild Semiconductor Corporation
- 80 A, 30 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Product Details Search Results:
Fairchildsemi.com/FDB8030LL86Z
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"80 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0035 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"300 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","...
1537 Bytes - 20:39:22, 30 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FE_BB31FDB8.pdf | 4.66 | 1 | Request | |
| DF_559FDB8D.pdf | 1.89 | 1 | Request | |
| DF_763FDB85.pdf | 0.30 | 1 | Request | |
| MEFA_3EFDB842.pdf | 0.14 | 1 | Request |
