VTP3310LAH SILICON PHOTODIODES
From Excelitas Technologies Sensors
Active Area | 0.0011 sq.in. |
Angle, Response | ±20 ° |
Capacitance, Junction | 25 pF |
Current, Dark | 35 nA |
Current, Short Circuit | 36 μA |
Package Type | T-1 |
Primary Type | Photo |
Resistance, Shunt | 10 Gigaohms |
Spectral Application Range | 400 to 1150 nm |
Spectral Sensitivity | 0.55 A/W |
Temperature, Operating | -40 to +100 °C |
Voltage, Breakdown | 140 V |
Voltage, Open Circuit | 350 mV |