VTB8441BH SILICON PHOTODIODES
From Excelitas Technologies Sensors
Active Area | 0.008 sq.in. |
Angle, Response | ±50 ° |
Capacitance, Junction | 1 nF |
Current, Dark | 100 pA |
Current, Short Circuit | 5 μA |
Package Type | Case 21F |
Primary Type | Photo |
Resistance, Shunt | 1.4 Gigaohms |
Spectral Application Range | 330 to 720 nm |
Temperature, Operating | -20 to +75 °C |
Voltage, Breakdown | 40 V |
Voltage, Open Circuit | 420 mV |