M13S128168A-6BIG
8M X 16 DDR DRAM, 0.7 ns, PBGA60

From Elite Semiconductor Memory Technology, Inc.

StatusACTIVE
Access ModeFOUR BANK PAGE BURST
Access Time-Max (tRAC)0.7000 ns
Memory Density1.34E8 deg
Memory IC TypeDDR DRAM
Memory Width16
Mfr Package Description8 X 13 MM, LEAD FREE, BGA-60
Number of Functions1
Number of Ports1
Number of Terminals60
Number of Words8.39E6 words
Number of Words Code8M
Operating ModeSYNCHRONOUS
Operating Temperature-Max85 Cel
Operating Temperature-Min-40 Cel
Organization8M X 16
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH
Supply Voltage-Max (Vsup)2.75 V
Supply Voltage-Min (Vsup)2.38 V
Supply Voltage-Nom (Vsup)2.5 V
Surface MountYes
Temperature GradeINDUSTRIAL
Terminal FormBALL
Terminal Pitch0.8000 mm
Terminal PositionBOTTOM

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