STQ2000 P-Channel Enhancement MOSFET - Quad MOSFET
From Silicon Transistor Corp.
| @(VDS) (V) (Test Condition) | 20 |
| @Freq. (Hz) (Test Condition) | 1.0M |
| @I(D) (A) (Test Condition) | 25m |
| @Temp (°C) (Test Condition) | 125 |
| @V(DS) (V) (Test Condition) | 25 |
| @V(GS) (V) (Test Condition) | 4.5 |
| Absolute Max. Power Diss. (W) | 1.3 |
| C(iss) Max. (F) | 50p |
| I(D) Abs. Drain Current (A) | 240m |
| I(DM) Max (A)(@25°C) | 0.8 |
| I(DSS) Max. (A) | 200u |
| I(GSS) Max. (A) | 10n |
| Military | N |
| Package | DIP |
| Thermal Resistance Junc-Amb. | 96.2 |
| V(BR)DSS (V) | 60 |
| V(BR)GSS (V) | 20 |
| V(GS)th Max. (V) | 3.0 |
| V(GS)th Min. (V) | 1.0 |
| r(DS)on Max. (Ohms) | 25 |
