R2N7269+JAN N-Channel Enhancement MOSFET - Radiation Hardened
From Defense Supply Center Columbus
| @(VDS) (V) (Test Condition) | 20 |
| @I(D) (A) (Test Condition) | 16 |
| @Temp (°C) (Test Condition) | 25 |
| @V(DS) (V) (Test Condition) | 15 |
| @V(GS) (V) (Test Condition) | 12 |
| Absolute Max. Power Diss. (W) | 150 |
| I(D) Abs. Drain Current (A) | 26 |
| I(D) Abs. Max.(A) Drain Curr. | 16 |
| I(DM) Max (A)(@25°C) | 104 |
| I(DSS) Max. (A) | 50u |
| I(GSS) Max. (A) | 100n |
| Mil Number | R2N7269+JAN |
| Military | Y |
| Package | TO-254AA |
| V(BR)DSS (V) | 200 |
| V(BR)GSS (V) | 20 |
| V(GS)th Max. (V) | 4 |
| V(GS)th Min. (V) | 2 |
| g(fs) Min. (S) Trans. conduct. | 8 |
| r(DS)on Max. (Ohms) | 115m |
| t(d)off Max. (s) Off time | 140n |
| t(f) Max. (s) Fall time. | 140n |
| t(r) Max. (s) Rise time | 140n |
| td(on) Max (s) On time delay | 33n |
