2N6383+JAN NPN Darlington Transistor
From Defense Supply Center Columbus
| @I(B) (A) (Test Condition) | 10m |
| @I(C) (A) (Test Condition) | 5.0 |
| @V(CBO) (V) (Test Condition) | 40 |
| @V(CE) (V) (Test Condition) | 5.0 |
| Absolute Max. Power Diss. (W) | 100 |
| I(C) Abs.(A) Collector Current | 10 |
| I(CBO) Max. (A) | 1.0m |
| Mil Number | JAN2N6383 |
| Military | Y |
| Package | TO-3 |
| Semiconductor Material | Silicon |
| V(BR)CBO (V) | 40 |
| V(BR)CEO (V) | 40 |
| V(CE)sat Max.(V) | 2.0 |
| f(T) Min. (Hz) Transition Freq | 20M |
| h(FE) Max. Current gain. | 20k |
| h(FE) Min. Static Current Gain | 1.0k |
