2N6301+JANTXV NPN Darlington Transistor
From Defense Supply Center Columbus
@I(B) (A) (Test Condition) | 80m |
@I(C) (A) (Test Condition) | 8.0 |
@V(CBO) (V) (Test Condition) | 80 |
@V(CE) (V) (Test Condition) | 3.0 |
Absolute Max. Power Diss. (W) | 75 |
I(C) Abs.(A) Collector Current | 8.0 |
I(CBO) Max. (A) | 500u |
Mil Number | JANTXV2N6301 |
Military | Y |
Package | TO-66 |
Semiconductor Material | Silicon |
V(BR)CBO (V) | 80 |
V(BR)CEO (V) | 80 |
V(CE)sat Max.(V) | 3.0 |
f(T) Min. (Hz) Transition Freq | 4.0M |
h(FE) Max. Current gain. | 18k |
h(FE) Min. Static Current Gain | 750 |