CY7C1332AV25-200BGXC
1M X 18 LATE-WRITE SRAM, 2.25 ns, PBGA119

From Cypress Semiconductor Corp.

StatusACTIVE
Access Time-Max (tACC)2.25 ns
China RoHS CompliantYes
EU RoHS CompliantYes
Lead FreeYes
Memory Density1.89E7 deg
Memory IC TypeLATE-WRITE SRAM
Memory Width18
Mfr Package Description14 X 22 MM, 2.40 MM HEIGHT, LEAD FREE, PLASTIC, FBGA-119
Number of Functions1
Number of Terminals119
Number of Words1.05E6 words
Number of Words Code1M
Operating ModeSYNCHRONOUS
Operating Temperature-Max70 Cel
Operating Temperature-Min0.0 Cel
Organization1M X 18
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY
Parallel/SerialPARALLEL
Supply Voltage-Max (Vsup)2.63 V
Supply Voltage-Min (Vsup)2.37 V
Supply Voltage-Nom (Vsup)2.5 V
Surface MountYes
Temperature GradeCOMMERCIAL
Terminal FinishTIN SILVER COPPER
Terminal FormBALL
Terminal Pitch1.27 mm
Terminal PositionBOTTOM

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