CY7C1332AV25-200BGC 1M X 18 LATE-WRITE SRAM, 2.25 ns, PBGA119
From Cypress Semiconductor Corp.
| Status | ACTIVE |
| Access Time-Max (tACC) | 2.25 ns |
| Memory Density | 1.89E7 deg |
| Memory IC Type | LATE-WRITE SRAM |
| Memory Width | 18 |
| Mfr Package Description | 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, FBGA-119 |
| Number of Functions | 1 |
| Number of Terminals | 119 |
| Number of Words | 1.05E6 words |
| Number of Words Code | 1M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 70 Cel |
| Operating Temperature-Min | 0.0 Cel |
| Organization | 1M X 18 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY |
| Parallel/Serial | PARALLEL |
| Supply Voltage-Max (Vsup) | 2.63 V |
| Supply Voltage-Min (Vsup) | 2.37 V |
| Supply Voltage-Nom (Vsup) | 2.5 V |
| Surface Mount | Yes |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | TIN LEAD |
| Terminal Form | BALL |
| Terminal Pitch | 1.27 mm |
| Terminal Position | BOTTOM |
