P6SMB110CATR13
600 W, BIDIRECTIONAL, SILICON, TVS DIODE

From Central Semiconductor Corp.

StatusACTIVE
Breakdown Voltage-Max116 V
Breakdown Voltage-Min104 V
ConfigurationSINGLE
Diode Element MaterialSILICON
Diode TypeTRANS VOLTAGE SUPPRESSOR DIODE
Non-rep Peak Rev Power Dis-Max600 W
Number of Elements1
Number of Terminals2
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
PolarityBIDIRECTIONAL
Surface MountYes
TechnologyAVALANCHE
Terminal FinishTIN LEAD
Terminal FormC BEND
Terminal PositionDUAL

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