Datasheet.Directory

{"C(iss) Max. (F)":"480p","Absolute Max. Power Diss. (W)":"40","V(BR)DSS (V)":"60","g(fs) Max, (S) Trans. conduct,":"5.7","I(D) Abs. Max.(A) Drain Curr.":"2.5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"55n","r(DS)on Max. (Ohms)":"150m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"12","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"3.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"7.5","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"2.5","V(GS)...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...