VFT300-50
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

From Advanced Semiconductor, Inc.

StatusActive
Case ConnectionSOURCE
ConfigurationSINGLE
DS Breakdown Voltage-Min125 V
Drain Current-Max (Abs) (ID)40 A
Drain Current-Max (ID)40 A
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Highest Frequency BandVERY HIGH FREQUENCY BAND
JESD-30 CodeR-CDFM-F4
Number of Elements1
Number of Terminals4
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150 Cel
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)500 W
Qualification StatusCOMMERCIAL
Sub CategoryFET General Purpose Power
Surface MountYES
Terminal FormFLAT
Terminal PositionDUAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON

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