BLV10 RF Bipolar Transistors RF Transistor
From Advanced Semiconductor, Inc.
Brand | Advanced Semiconductor, Inc. |
Collector- Emitter Voltage VCEO Max | 18 V |
Configuration | Single |
Continuous Collector Current | 1.5 A |
DC Collector/Base Gain hfe Min | 10 |
Emitter- Base Voltage VEBO | 4 V |
Frequency | 175 MHz |
Manufacturer | Advanced Semiconductor, Inc. |
Maximum DC Collector Current | 4 A |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 65 C |
Mounting Style | Screw |
Package / Case | SOT-123 |
Packaging | Tray |
Pd - Power Dissipation | 20 W |
Product Category | RF Bipolar Transistors |
RoHS | Details |
Technology | Si |
Transistor Polarity | NPN |
Transistor Type | Bipolar Power |