ASTD4050-860 18 GHz, SILICON, TUNNEL DIODE
From Advanced Semiconductor, Inc.
Status | ACTIVE |
Configuration | SINGLE |
Diode Element Material | SILICON |
Diode Type | TUNNEL DIODE |
Mfr Package Description | 860, 2 PIN |
Number of Elements | 1 |
Number of Terminals | 2 |
Output Frequency-Max | 18 GHz |
Package Body Material | UNSPECIFIED |
Package Shape | SQUARE |
Package Style | MICROWAVE |
Power Dissipation Limit-Max | 0.0500 W |
Surface Mount | Yes |
Technology | TUNNEL |
Terminal Form | FLAT |
Terminal Position | DUAL |