APT601R2DN N-Channel Enhancement MOSFET
From Advanced Power Technology
| Absolute Max. Power Diss. (W) | 180 |
| C(iss) Max. (F) | 850p |
| I(D) Abs. Drain Current (A) | 8 |
| I(DM) Max (A)(@25°C) | 32 |
| Military | N |
| Package | Chip |
| V(BR)DSS (V) | 600 |
| r(DS)on Max. (Ohms) | 1.2 |
