APT1001R2HN N-Channel Enhancement MOSFET
From Advanced Power Technology
| Absolute Max. Power Diss. (W) | 250 |
| C(iss) Max. (F) | 2.45n |
| I(D) Abs. Drain Current (A) | 9.0 |
| Military | N |
| Package | TO-247Herm |
| V(BR)DSS (V) | 1.0k |
| r(DS)on Max. (Ohms) | 1.2 |
