APT1001R1AN N-Channel Enhancement MOSFET - RthJC 0.53 C/W(max),RthJA 30 C/W(max)
From Advanced Power Technology
| @(VDS) (V) (Test Condition) | 30 |
| Absolute Max. Power Diss. (W) | 230 |
| C(iss) Max. (F) | 2.95n |
| I(D) Abs. Drain Current (A) | 9.5 |
| I(DSS) Min. (A) | 250u |
| I(GSS) Max. (A) | 100n |
| Military | N |
| Package | TO-3 |
| V(BR)DSS (V) | 1.0k |
| V(BR)GSS (V) | 30 |
| r(DS)on Max. (Ohms) | 1.1 |
| t(f) Max. (s) Fall time. | 48n |
| t(r) Max. (s) Rise time | 32n |
