10011PCEN N-Channel Enhancement MOSFET - Qg 1.35nC,
From Advanced Power Technology
| Absolute Max. Power Diss. (W) | 1.56k |
| C(iss) Max. (F) | 13n |
| I(D) Abs. Drain Current (A) | 95 |
| Military | N |
| Package | TO-254 |
| V(BR)DSS (V) | 1.0k |
| r(DS)on Max. (Ohms) | 110m |
