Product Datasheet Search Results:
5 Pages, 93 KB, Original- AP3990I
- Advanced Power Electronics Corp. Usa
- 10 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
4 Pages, 59 KB, Original- AP3990I-HF
- Advanced Power Electronics Corp. Usa
- 10 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
A-power.com.tw/AP3990I
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"50 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V",...
1507 Bytes - 17:27:57, 01 December 2024
A-power.com.tw/AP3990I-HF
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"50 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V",...
1545 Bytes - 17:27:57, 01 December 2024
Documentation and Support
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| MHAP3-BP-3.pdf | 6.22 | 1 | Request | |
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