Product Datasheet Search Results:

PRECONDITIONING OF SMT PACKAGES.pdf2 Pages, 14 KB, Original
PRECONDITIONING OF SMT PACKAGES
National Semiconductor
Preconditioning of SMT Packages
1N1730.pdf6 Pages, 633 KB, Scan
1N1730
Conditioning Semiconductor Devices Corporation
750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier
1N1731.pdf6 Pages, 633 KB, Scan
1N1731
Conditioning Semiconductor Devices Corporation
750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier
1N1732.pdf6 Pages, 633 KB, Scan
1N1732
Conditioning Semiconductor Devices Corporation
750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier
1N1733.pdf4 Pages, 547 KB, Scan
1N1733
Conditioning Semiconductor Devices Corporation
3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier
1N1734.pdf4 Pages, 547 KB, Scan
1N1734
Conditioning Semiconductor Devices Corporation
3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier
1N2382.pdf4 Pages, 547 KB, Scan
1N2382
Conditioning Semiconductor Devices Corporation
3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier
1N2383.pdf4 Pages, 547 KB, Scan
1N2383
Conditioning Semiconductor Devices Corporation
3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier
1N2384.pdf4 Pages, 547 KB, Scan
1N2384
Conditioning Semiconductor Devices Corporation
3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier
1N2385.pdf4 Pages, 547 KB, Scan
1N2385
Conditioning Semiconductor Devices Corporation
3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier
1N5477.pdf4 Pages, 547 KB, Scan
1N5477
Conditioning Semiconductor Devices Corporation
3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier
1N5478.pdf4 Pages, 547 KB, Scan
1N5478
Conditioning Semiconductor Devices Corporation
3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier

Product Details Search Results:

Conditioning_semiconductor_devices_corporation/423DB1AB1
{"V(FM) Max.(V) Forward Voltage":"1.0","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"50","Package":"SIP","I(O) Max.(A) Output Current":"1.5","@Temp. (°C) (Test Condition)":"25","@Temp (°C) (Test Condition)":"50","@V(R) (V)(Test Condition)":"400","V(RRM)(V) Rep.Pk.Rev. Voltage":"400","Military":"N","I(RM) Max.(A) Reverse Current":"1.0u","@I(FM) (A) (Test Condition)":"1.0","I(RM) Max.(A) Pk. Rev. Current":"25u"}...
968 Bytes - 18:25:26, 05 January 2025
Conditioning_semiconductor_devices_corporation/423MB2AI1
{"V(FM) Max.(V) Forward Voltage":"2.1","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"50","Package":"BR-3q","I(O) Max.(A) Output Current":"1.0","@Temp. (°C) (Test Condition)":"25","@Temp (°C) (Test Condition)":"40","@V(R) (V)(Test Condition)":"1.0k","V(RRM)(V) Rep.Pk.Rev. Voltage":"1.0k","Military":"N","I(RM) Max.(A) Reverse Current":"1.0u","@I(FM) (A) (Test Condition)":"1.0","I(RM) Max.(A) Pk. Rev. Current":"25u"}...
972 Bytes - 18:25:26, 05 January 2025
Conditioning_semiconductor_devices_corporation/423NF1AH1
{"V(FM) Max.(V) Forward Voltage":"1.05","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"50","Package":"BR-6t","I(O) Max.(A) Output Current":"3.6","@Temp. (°C) (Test Condition)":"25","@Temp (°C) (Test Condition)":"50","@V(R) (V)(Test Condition)":"800","V(RRM)(V) Rep.Pk.Rev. Voltage":"800","Military":"N","I(RM) Max.(A) Reverse Current":"1.0u","@I(FM) (A) (Test Condition)":"1.0","I(RM) Max.(A) Pk. Rev. Current":"25u"}...
949 Bytes - 18:25:26, 05 January 2025
Conditioning_semiconductor_devices_corporation/423PC13AE1
{"V(FM) Max.(V) Forward Voltage":"16","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"500","Package":"BR-5q","I(O) Max.(A) Output Current":"1.2","@Temp. (°C) (Test Condition)":"25","@Temp (°C) (Test Condition)":"55","@V(R) (V)(Test Condition)":"12k","V(RRM)(V) Rep.Pk.Rev. Voltage":"12k","Military":"N","I(RM) Max.(A) Reverse Current":"1.0u","@I(FM) (A) (Test Condition)":"1.0","I(RM) Max.(A) Pk. Rev. Current":"100u"}...
976 Bytes - 18:25:26, 05 January 2025
Conditioning_semiconductor_devices_corporation/424AB1AB1
{"@Temp. (°C) (Test Condition)":"100","t(rr) Max.(s) Rev.Rec. Time":"250n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"SIP","I(O) Max.(A) Output Current":"1.0","@V(R) (V)(Test Condition)":"100","V(RRM)(V) Rep.Pk.Rev. Voltage":"100","Military":"N","I(RM) Max.(A) Reverse Current":"2.0u","@I(FM) (A) (Test Condition)":"1.0","I(RM) Max.(A) Pk. Rev. Current":"150u"}...
965 Bytes - 18:25:26, 05 January 2025
Conditioning_semiconductor_devices_corporation/426EH2AB1
{"@Temp. (°C) (Test Condition)":"100","t(rr) Max.(s) Rev.Rec. Time":"250n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"2.4","Package":"Axial-13","I(O) Max.(A) Output Current":"500m","@V(R) (V)(Test Condition)":"1.0k","V(RRM)(V) Rep.Pk.Rev. Voltage":"1.0k","Military":"N","I(RM) Max.(A) Reverse Current":"2.0u","@I(FM) (A) (Test Condition)":"1.0","I(RM) Max.(A) Pk. Rev. Current":"150u"}...
962 Bytes - 18:25:26, 05 January 2025
Conditioning_semiconductor_devices_corporation/42A5175
{"Status":"Discontinued","Package":"FP","Vsup Nom.(V) Supply Voltage":"5.0","t(r) Max. (s) Rise time":"4.0n","Circuits Per Package":"1","Pins":"14","t(PLH) Maximum (S)":"175n","Technology":"TTL"}...
719 Bytes - 18:25:26, 05 January 2025
Conditioning_semiconductor_devices_corporation/42A5200
{"Status":"Discontinued","Package":"FP","Vsup Nom.(V) Supply Voltage":"5.0","t(r) Max. (s) Rise time":"4.0n","Circuits Per Package":"1","Pins":"14","t(PLH) Maximum (S)":"20n","Technology":"TTL"}...
719 Bytes - 18:25:26, 05 January 2025
Conditioning_semiconductor_devices_corporation/42A5300
{"Status":"Discontinued","Package":"FP","Vsup Nom.(V) Supply Voltage":"5.0","t(r) Max. (s) Rise time":"4.0n","Circuits Per Package":"1","Pins":"14","t(PLH) Maximum (S)":"30n","Technology":"TTL"}...
718 Bytes - 18:25:26, 05 January 2025
Conditioning_semiconductor_devices_corporation/42A5400
{"Status":"Discontinued","Package":"FP","Vsup Nom.(V) Supply Voltage":"5.0","t(r) Max. (s) Rise time":"4.0n","Circuits Per Package":"1","Pins":"14","t(PLH) Maximum (S)":"40n","Technology":"TTL"}...
719 Bytes - 18:25:26, 05 January 2025
Conditioning_semiconductor_devices_corporation/42A5600
{"Status":"Discontinued","Package":"FP","Vsup Nom.(V) Supply Voltage":"5.0","t(r) Max. (s) Rise time":"4.0n","Circuits Per Package":"1","Pins":"14","t(PLH) Maximum (S)":"60n","Technology":"TTL"}...
719 Bytes - 18:25:26, 05 January 2025
Conditioning_semiconductor_devices_corporation/523BB1AI1
{"V(FM) Max.(V) Forward Voltage":"930m","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","Package":"BR-3q","I(O) Max.(A) Output Current":"4.0","@Temp. (°C) (Test Condition)":"25","@Temp (°C) (Test Condition)":"40","@V(R) (V)(Test Condition)":"200","V(RRM)(V) Rep.Pk.Rev. Voltage":"200","Military":"N","I(RM) Max.(A) Reverse Current":"2.0u","@I(FM) (A) (Test Condition)":"1.0","I(RM) Max.(A) Pk. Rev. Current":"50u"}...
972 Bytes - 18:25:26, 05 January 2025

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