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2SK3874-01R.pdf4 Pages, 113 KB, Original

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Fujielectric.co.jp/2SK3874-01R
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"3.13 W","Avalanche Energy Rating (Eas)":"1039 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"56 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0610 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"224 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICO...
1499 Bytes - 05:40:14, 01 December 2024

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