Product Datasheet Search Results:
4 Pages, 106 KB, Original- 2SK3779-01R
- Fuji Electric
- 2SK3779-01R
Product Details Search Results:
Fujielectric.co.jp/2SK3779-01R
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"3.13 W","Avalanche Energy Rating (Eas)":"1115 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"59 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0530 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"236 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICO...
1500 Bytes - 05:37:18, 01 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK3779-01R.pdf | 0.10 | 1 | Request |
