Product Datasheet Search Results:

2SC3503CSTSTU.pdf6 Pages, 133 KB, Original
2SC3503CSTSTU
Fairchild Semiconductor Corporation
0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
2SC3503CSTU.pdf6 Pages, 133 KB, Original
2SC3503CSTU
Fairchild
TRANS NPN 300V 100MA TO-126 - 2SC3503CSTU
2SC3503C.pdf1 Pages, 80 KB, Scan
2SC3503C
N/a
Transistor Shortform Datasheet & Cross References
2SC3503C-CD.pdf1 Pages, 70 KB, Scan
2SC3503C-CD
On Semiconductor L.l.c.
0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
2SC3503C-LS.pdf1 Pages, 70 KB, Scan
2SC3503C-LS
On Semiconductor L.l.c.
0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
2SC3503C-LT.pdf1 Pages, 70 KB, Scan
2SC3503C-LT
On Semiconductor L.l.c.
0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
2SC3503C-RA.pdf1 Pages, 70 KB, Scan
2SC3503C-RA
On Semiconductor L.l.c.
0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
2SC3503C-SA.pdf1 Pages, 70 KB, Scan
2SC3503C-SA
On Semiconductor L.l.c.
0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
2SC3503C-YA.pdf1 Pages, 70 KB, Scan
2SC3503C-YA
On Semiconductor L.l.c.
0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
2SC3503C.pdf4 Pages, 322 KB, Scan
2SC3503C
Sanyo Semiconductor
PNP/NPN Epitaxial Planar Silicon Transistors

Product Details Search Results:

Fairchildsemi.com/2SC3503CSTSTU
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SHORT-LEAD TO-126, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"300 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configuration":"SI...
1365 Bytes - 17:24:53, 23 November 2024
Fairchildsemi.com/2SC3503CSTU
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"40 @ 10mA, 10V","Transistor Type":"NPN","Product Photos":"MJE350STU","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 2mA, 20mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","Series":"-","Standard Package":"1,920","Voltage - Collector Emitter Breakdown (Max)":"300V","Supplier Device Package":"TO-126","Packaging":"Tube","Datasheets":"ACH(2-AT,0-CD)...
1601 Bytes - 17:24:53, 23 November 2024
Onsemi.com/2SC3503C
{"@I(C) (A) (Test Condition)":"10m","I(CBO) Max. (A)":"0.1u","Absolute Max. Power Diss. (W)":"1.2","I(C) Abs.(A) Collector Current":"100m","h(FE) Max. Current gain.":"80","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"150M","V(BR)CEO (V)":"300","Package":"TO-126","h(FE) Min. Static Current Gain":"40","V(BR)CBO (V)":"300","Military":"N"}...
841 Bytes - 17:24:53, 23 November 2024
Onsemi.com/2SC3503C-CD
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"300 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...
1339 Bytes - 17:24:53, 23 November 2024
Onsemi.com/2SC3503C-LS
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"300 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...
1340 Bytes - 17:24:53, 23 November 2024
Onsemi.com/2SC3503C-LT
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"300 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...
1338 Bytes - 17:24:53, 23 November 2024
Onsemi.com/2SC3503C-RA
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"300 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...
1338 Bytes - 17:24:53, 23 November 2024
Onsemi.com/2SC3503C-SA
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"300 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...
1338 Bytes - 17:24:53, 23 November 2024
Onsemi.com/2SC3503C-YA
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"300 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...
1337 Bytes - 17:24:53, 23 November 2024

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