Product Datasheet Search Results:
11 Pages, 324 KB, Scan- 2N6782EB
- International Rectifier
- 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
11 Pages, 324 KB, Scan- 2N6782EBPBF
- International Rectifier
- 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Product Details Search Results:
Irf.com/2N6782EB
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","Number o...
1222 Bytes - 21:44:03, 29 November 2024
Irf.com/2N6782EBPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.6000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...
1287 Bytes - 21:44:03, 29 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 7B35E022N673G1.pdf | 0.07 | 1 | Request | |
| 7B35E6472N674H2.pdf | 0.07 | 1 | Request | |
| 7B35E4822N674G1.pdf | 0.07 | 1 | Request | |
| 7B36R552N675G1.pdf | 0.08 | 1 | Request | |
| 7B35E2852N679G1.pdf | 0.04 | 1 | Request |
